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SI2369DS-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI2369DS-T1-GE3
Description
场效应管(MOSFET) 1.25W；2.5W 30V 7.6A 1个P沟道 SOT-23
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Threshold Voltage | 2.5 V @ 250 μA |
| Drain-Source Voltage | 30V |
| Type | P-Channel |
| Power | 1.25W, 2.5W |
| Gate Charge | 36nC@10V |
| Continuous Drain Current | 7.6A |
| On-Resistance | 29mΩ |
| Input Capacitance | 1295 pF @ 15 V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 1
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.2813 | |
| 100+ | $ 0.2214 | |
| 750+ | $ 0.1977 | |
| 1500+ | $ 0.1852 | |
| 3000+ | $ 0.1727 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
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