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SI2371EDS-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI2371EDS-T1-GE3
Description
场效应管(MOSFET) 1W；1.7W 30V 4.8A 1个P沟道 SOT-23
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Gate Charge | 35nC@10V |
| Threshold Voltage | 1.5V@250µA |
| Type | P-Channel |
| On-Resistance | 45mΩ |
| Continuous Drain Current | 4.8 A |
| Power | 1W, 1.7W |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 4
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.1309 | |
| 200+ | $ 0.1003 | |
| 1500+ | $ 0.0863 | |
| 3000+ | $ 0.0794 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
SI2371EDS-T1-GE3-VB
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Vbsemi
SI2374DS-T1-GE3
场效应管(MOSFET) 960mW；1.7W 20V 4.5A；5.9A 1个N沟道 SOT-23-3(TO-236-3)
VISHAY
SI2374DS-T1-GE3
MOSFET 20V 5.9A 1.7W
VISHAY
Si2374DS-T1-GE3-HXY
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HUAXUANYANG
