Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SI2374DS-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI2374DS-T1-GE3
Description
场效应管(MOSFET) 960mW；1.7W 20V 4.5A；5.9A 1个N沟道 SOT-23-3(TO-236-3)
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-Channel |
| Drain-Source Voltage | 20V |
| Threshold Voltage | 1V@250µA |
| Gate Charge | 20nC@10V |
| Continuous Drain Current | 4.5A |
| Power | 96mW, 80mW |
| On-Resistance | 30mΩ@4A, 4.5V |
| Input Capacitance | 735 pF @ 15 V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 14,156
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.2061 | |
| 100+ | $ 0.1574 | |
| 750+ | $ 0.1295 | |
| 1500+ | $ 0.1170 | |
| 3000+ | $ 0.1072 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
Si2374DS-T1-GE3-HXY
--
HUAXUANYANG
SI2377EDS-T1-GE3
场效应管(MOSFET) 1.25W；1.8W 20V 4.4A 1个P沟道 SOT-23
VISHAY
SI2377EDS-T1-GE3
MOSFET P-CH 20V 4.4A SOT-23
VISHAY
SI2377EDS-T1-GE3
场效应管(MOSFET) 1.25W；1.8W 20V 4.4A 1个P沟道 SOT-23
VISHAY
