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RQ3E100MNTB1
Manufacturer
ROHMManufacturer Product Number
RQ3E100MNTB1
Description
MOSFET
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | N-channel |
| Drain-Source Voltage | 30V |
| Operating Temperature | 150℃ |
| Power | 2W |
| Continuous Drain Current | 10A |
| Threshold Voltage | 2.5V@1mA |
| Input Capacitance | 520pF@15V |
| Gate Charge | 9.9nC@10V |
| On-Resistance | 12.3mΩ@10A，10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2,482
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 3.2948 | |
| 10+ | $ 2.0986 | |
| 100+ | $ 1.3939 | |
| 500+ | $ 1.1433 | |
| 1000+ | $ 0.9998 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
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工作温度：150°C(TJ) 封装/外壳：HSMT 连续漏极电流Id：12A Pd-功率耗散(Max)：2W Rds On(Max)@Id,Vgs：8mΩ@-12A,-10V
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