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RQ3E110AJTB
Manufacturer
ROHMManufacturer Product Number
RQ3E110AJTB
Description
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Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | N-Channel |
| Drain-Source Voltage | 30V |
| Operating Temperature | 150℃ |
| Power | 2W |
| Continuous Drain Current | 11A, 24A |
| Gate Charge | 13.5nC @ 4.5V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 13,004
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.2616 | |
| 10+ | $ 0.7882 | |
| 100+ | $ 0.5166 | |
| 500+ | $ 0.4011 | |
| 1000+ | $ 0.3635 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
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RQ3E120AT Series -30 V -39 A 8 mOhm Surface Mount Power Mosfet - HSMT-8
ROHM
RQ3E120ATTB
工作温度：150°C(TJ) 封装/外壳：HSMT 连续漏极电流Id：12A Pd-功率耗散(Max)：2W Rds On(Max)@Id,Vgs：8mΩ@-12A,-10V
ROHM
RQ3E120BNTB
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ROHM
RQ3E120GNTB
连续漏极电流Id：12A Pd-功率耗散(Max)：2W Rds On(Max)@Id,Vgs：8.8mΩ@12A,10V 漏源极电压Vds：30V 栅极电压Vgs：±20V
ROHM