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RQ3E120ATTB
Manufacturer
ROHMManufacturer Product Number
RQ3E120ATTB
Description
工作温度：150°C(TJ) 封装/外壳：HSMT 连续漏极电流Id：12A Pd-功率耗散(Max)：2W Rds On(Max)@Id,Vgs：8mΩ@-12A,-10V
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 30V |
| Drain-Source Saturation Current | 12A |
| Drain-Source On-Resistance | 0.0113 Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 25,036
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.2534 | |
| 100+ | $ 0.2019 | |
| 750+ | $ 0.1782 | |
| 1500+ | $ 0.1671 | |
| 3000+ | $ 0.1560 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllRQ3E120BNTB
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ROHM
RQ3E120GNTB
连续漏极电流Id：12A Pd-功率耗散(Max)：2W Rds On(Max)@Id,Vgs：8.8mΩ@12A,10V 漏源极电压Vds：30V 栅极电压Vgs：±20V
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RQ3E120GNTB
RQ3E120GN Series 30 V 27 A 15 W Surface Mount N-Channel Power Mosfet - HSMT-8
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RQ3E120GNTB
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ROHM