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RQ3E100BNTB
Manufacturer
ROHMManufacturer Product Number
RQ3E100BNTB
Description
场效应管(MOSFET) 2W 30V 10A 1个N沟道 HSMT-8(3x3.2)
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 30V |
| Drain-Source Saturation Current | 10 A |
| Drain-Source On-Resistance | 0.0153 Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 34
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.1212 | |
| 200+ | $ 0.0822 | |
| 1500+ | $ 0.0752 | |
| 3000+ | $ 0.0696 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllRQ3E100GNTB
连续漏极电流Id：10A Pd-功率耗散(Max)：2W Rds On(Max)@Id,Vgs：11.7mΩ 漏源极电压Vds：30V 栅极电压Vgs：2.5V
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