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2SK3018T106
Manufacturer
ROHMManufacturer Product Number
2SK3018T106
Description
场效应管(MOSFET) 200mW 30V 100mA 1个N沟道 SOT-323
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 30V |
| Power | 0.2W |
| Drain-Source Saturation Current | 0.1A |
| Drain-Source On-Resistance | 8 Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 25,710
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 10+ | $ 0.0571 | |
| 100+ | $ 0.0460 | |
| 300+ | $ 0.0404 | |
| 3000+ | $ 0.0320 | |
| 6000+ | $ 0.0292 | |
| 9000+ | $ 0.0279 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
2SK3018T106(MS)
此款N沟道场效应晶体管采用SOT-323封装，具备漏源电压(Vdss)：30V，连续漏极电流(Id)：300mA，RDS:10V@0.3A=1R,适用于电池供电设备、便携式电子产品、逻辑电平转换、信号放大以及需要高效能和空间节省的电路设计中。
MSKSEMI
2SK3018W
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SHIKUES
2SK3018W
未分类
BORN
2SK3018W
场效应管(MOSFET) 1.5Ω 30V 100mA 1个N沟道 SOT-323
HUAXUANYANG