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2SK3018T106(MS)

Manufacturer

MSKSEMI

Manufacturer Product Number

2SK3018T106(MS)

Description

此款N沟道场效应晶体管采用SOT-323封装,具备漏源电压(Vdss):30V,连续漏极电流(Id):300mA,RDS:10V@0.3A=1R,适用于电池供电设备、便携式电子产品、逻辑电平转换、信号放大以及需要高效能和空间节省的电路设计中。

Manufacturer Standard Lead Time

5-7个

Detailed Description

此款N沟道场效应晶体管采用SOT-323封装,具备漏源电压(Vdss):30V,连续漏极电流(Id):300mA,RDS:10V@0.3A=1R,适用于电池供电设备、便携式电子产品、逻辑电平转换、信号放大以及需要高效能和空间节省的电路设计中。

Product Attributes

Type Description
Category Boxes, Enclosures, Racks andBox Components

Documents & Media

Resource Type Link

Environmental & Export Classifications

Attribute Description

Additional Resources

Attribute Description

In Stock: 2,140

Quantity Unit Price Ext Price
20+ $ 0.0223
200+ $ 0.0181
600+ $ 0.0153
2000+ $ 0.0125
10000+ $ 0.0111
20000+ $ 0.0111
Price For:Each

Minimum:1/Multiple:1

Total amount:

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