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2SK3018W
Manufacturer
SHIKUESManufacturer Product Number
2SK3018W
Description
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Manufacturer Standard Lead Time
3-5
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | 1 N-channel |
| Power | 200 mW |
| Drain-Source Voltage | 30V |
| Continuous Drain Current | 100 mA |
| On-Resistance | 8Ω@4V,10mA |
| Threshold Voltage | 1.5V@100μA |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2,380
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.0111 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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2SK3018W(MS)
此款N沟道场效应晶体管采用SOT-323封装，具备漏源电压(Vdss)：30V，连续漏极电流(Id)：300mA，RDS:10V@0.3A=1R,适用于电池供电设备、便携式电子产品、逻辑电平转换、信号放大以及需要高效能和空间节省的电路设计中。
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2SK3018WT
场效应管(MOSFET) 150mW 30V 100mA 1个N沟道 SOT-523-3
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