Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
NTS4001NT1G
Manufacturer
MSKSEMIManufacturer Product Number
NTS4001NT1G
Description
类型：N沟道漏源电压(Vdss)：30V连续漏极电流(Id)：300mA功率(Pd)：313mW导通电阻(RDS(on)@Vgs,Id)：1.5Ω@10V,阈值电压(Vgs(th)@Id)：08V-1.6V@250uA单N沟道小信号MOSFET30V
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | 1 N-channel |
| Drain-Source Voltage | 30V |
| Threshold Voltage | 1.6V @ 250μA |
| On-Resistance | 1.5Ω@10V |
| Continuous Drain Current | 300 mA |
| Power | 313 mW |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 4,970
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 10+ | $ 0.0460 | |
| 100+ | $ 0.0376 | |
| 300+ | $ 0.0334 | |
| 3000+ | $ 0.0279 | |
| 6000+ | $ 0.0251 | |
| 9000+ | $ 0.0237 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
NTS4001NT1G-VB
--
Vbsemi
NTS4101PT1G
--
Onsemi
NTS4101PT1G
场效应管(MOSFET) 329mW 20V 1.37A 1个P沟道 SOT-323-3
Onsemi
NTS4101PT1G
P-Channel 20 V 83 mOhm 329 mW Surface Mount Power MOSFET - SOT-323
Onsemi