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NTS4101PT1G
Manufacturer
OnsemiManufacturer Product Number
NTS4101PT1G
Description
场效应管(MOSFET) 329mW 20V 1.37A 1个P沟道 SOT-323-3
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 20V |
| Drain-Source On-Resistance | 0.12 Ω |
| Drain-Source Saturation Current | 1.37 A |
| Input Capacitance | 85 pF |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 1,284
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.1281 | |
| 200+ | $ 0.0822 | |
| 1500+ | $ 0.0710 | |
| 3000+ | $ 0.0627 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
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NTS4173PT1G
类型：P沟道 漏源电压(Vdss)：30V 连续漏极电流(Id)：1.2A 功率(Pd)：290mW 导通电阻(RDS(on)@Vgs,Id)：150mΩ@1.2A,10V 单 P 沟道，功率 MOSFET，-30V，-1.3A，150mΩ 这是一个 30 V P 沟道功率 MOSFET
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NTS4173PT1G
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NTS4173PT1G
MOSFET PFET SC70 30V TR
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