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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

NTS4101PT1G

Manufacturer

Onsemi

Manufacturer Product Number

NTS4101PT1G

Description

--

Manufacturer Standard Lead Time

5-7个

Detailed Description

--

Datasheet

Product Attributes

Type	Description
Category	Boxes, Enclosures, Racks andBox Components
Gate-Source Breakdown Voltage	20V
Drain-Source On-Resistance	0.12 Ω
Drain-Source Saturation Current	1.37 A
Input Capacitance	85 pF

Documents & Media

Resource Type	Link

Environmental & Export Classifications

Attribute	Description

Additional Resources

Attribute	Description

In Stock: 175

Quantity	Unit Price	Ext Price
5+	$ 0.0794
50+	$ 0.0641
150+	$ 0.0557
500+	$ 0.0501
3000+	$ 0.0446
6000+	$ 0.0432

Price For：Each

Minimum:1/Multiple:1

Total amount:

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类型：P沟道漏源电压(Vdss)：30V 连续漏极电流(Id)：1.2A 功率(Pd)：290mW 导通电阻(RDS(on)@Vgs,Id)：150mΩ@1.2A,10V 单 P 沟道，功率 MOSFET，-30V，-1.3A，150mΩ 这是一个 30 V P 沟道功率 MOSFET

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NTS4173PT1G

--

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NTS4173PT1G

MOSFET PFET SC70 30V TR

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