Manufacturer
InfineonManufacturer Product Number
IPD65R650CEAUMA1
Description
Infineon CoolMOS CE 系列 N沟道 MOSFET IPD65R650CEAUMA1, 10.1 A, Vds=700 V, 3引脚 TO-252封装
Manufacturer Standard Lead Time
10-15
Detailed Description
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | N-channel |
| Operating Temperature | -40℃~150℃ |
| Drain-Source Voltage | 650V |
| Continuous Drain Current | 7A |
| Gate Charge | 23nC@10V |
| Input Capacitance | 440pF @ 100V |
| Power | 86W |
| On-Resistance | 650mΩ @ 2.1A, 10V |
| Threshold Voltage | 3.5V @ 210µA |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 2.6417 | |
| 10+ | $ 1.6669 | |
| 100+ | $ 1.1043 | |
| 500+ | $ 0.8634 | |
| 1000+ | $ 0.7854 |
Minimum:1/Multiple:1
Total amount: