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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

IPD65R660CFDATMA1

Manufacturer

Infineon

Manufacturer Product Number

IPD65R660CFDATMA1

Description

晶体管: N-MOSFET; 单极; 650V; 6A; 62.5W; PG-TO252-3; CoolMOS™

Manufacturer Standard Lead Time

3-5

Detailed Description

晶体管: N-MOSFET; 单极; 650V; 6A; 62.5W; PG-TO252-3; CoolMOS™

Datasheet

Product Attributes

Type	Description
Category	Boxes, Enclosures, Racks andBox Components
Operating Temperature	-55℃~150℃
Type	N-channel
Drain-Source Voltage	650V
Gate Charge	22nC@10V
Continuous Drain Current	6A
Threshold Voltage	4.5 V @ 200 µA
Power	62.5W
On-Resistance	660 mΩ @ 2.1 A, 10 V
Input Capacitance	615 pF @ 100 V

Documents & Media

Resource Type	Link

Environmental & Export Classifications

Attribute	Description

Additional Resources

Attribute	Description

In Stock: 10

Quantity	Unit Price	Ext Price
1+	$ 0.8258

Price For：Each

Minimum:1/Multiple:1

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