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IPD65R660CFDBTMA1
Manufacturer
InfineonManufacturer Product Number
IPD65R660CFDBTMA1
Description
N-Channel 650 V 660 mOhm CoolMOSTM CFD2 Power Transistor-PG-TO252-3
Manufacturer Standard Lead Time
3-5
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Drain-Source Voltage | 650V |
| Gate Charge | 22nC@10V |
| Continuous Drain Current | 6A |
| Threshold Voltage | 4.5 V @ 200 µA |
| Power | 62.5W |
| On-Resistance | 660 mΩ @ 2.1 A, 10 V |
| Input Capacitance | 615 pF @ 100 V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 4
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.9510 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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