Manufacturer
InfineonManufacturer Product Number
IPD60R360PFD7SAUMA1
Description
--
Manufacturer Standard Lead Time
10-15
Detailed Description
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| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Drain-Source Voltage | 600V |
| Type | N-channel |
| Operating Temperature | -40℃~150℃ |
| Continuous Drain Current | 10A |
| Power | 43W |
| Gate Charge | 12.7nC @ 10V |
| On-Resistance | 360mΩ@2.9A,10V |
| Threshold Voltage | 4.5V@140µA |
| Input Capacitance | 534pF @ 400V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.6587 | |
| 10+ | $ 0.5556 | |
| 100+ | $ 0.5403 | |
| 500+ | $ 0.5333 | |
| 1000+ | $ 0.5125 |
Minimum:1/Multiple:1
Total amount:
IPD60R380P6ATMA1
Infineon CoolMOS P6 系列 N沟道 MOSFET IPD60R380P6ATMA1, 10.6 A, Vds=650 V, 3引脚 TO-252封装
Infineon