Manufacturer
InfineonManufacturer Product Number
IPD60R380C6ATMA1
Description
MOSFET N-CH 600V 10.6A TO252
Manufacturer Standard Lead Time
10-15
Detailed Description
MOSFET N-CH 600V 10.6A TO252
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 600V |
| Type | N-channel |
| Gate Charge | 32nC @ 10V |
| Power | 83W |
| Continuous Drain Current | 10.6 A |
| On-Resistance | 380mΩ @ 3.8A, 10V |
| Threshold Voltage | 3.5 V @ 320 µA |
| Input Capacitance | 700 pF @ 100 V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 2.6988 | |
| 10+ | $ 1.7295 | |
| 100+ | $ 1.1753 | |
| 500+ | $ 0.9372 | |
| 1000+ | $ 0.8620 |
Minimum:1/Multiple:1
Total amount:
IPD60R380P6ATMA1
Infineon CoolMOS P6 系列 N沟道 MOSFET IPD60R380P6ATMA1, 10.6 A, Vds=650 V, 3引脚 TO-252封装
Infineon
IPD60R380P6ATMA1
Infineon CoolMOS P6 系列 N沟道 MOSFET IPD60R380P6ATMA1, 10.6 A, Vds=650 V, 3引脚 TO-252封装
Infineon