Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
IPD60R380P6ATMA1
Manufacturer
InfineonManufacturer Product Number
IPD60R380P6ATMA1
Description
Infineon CoolMOS P6 系列 N沟道 MOSFET IPD60R380P6ATMA1, 10.6 A, Vds=650 V, 3引脚 TO-252封装
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 600V |
| Type | N-channel |
| Power | 83W |
| Continuous Drain Current | 10.6 A |
| Gate Charge | 19 nC @ 10 V |
| On-Resistance | 380mΩ @ 3.8A, 10V |
| Threshold Voltage | 4.5V @ 320µA |
| Input Capacitance | 877pF @ 100V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2,249
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 2.3102 | |
| 10+ | $ 1.4858 | |
| 100+ | $ 0.9957 | |
| 500+ | $ 0.7896 | |
| 1000+ | $ 0.7339 | |
| 5000+ | $ 0.7102 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
IPD60R385CP
场效应管
Infineon
IPD60R385CPATMA1
Trans MOSFET N-CH 600V 9A 3-Pin TO-252 T/R
Infineon
IPD60R385CPATMA1
Trans MOSFET N-CH 600V 9A 3-Pin TO-252 T/R
Infineon
IPD60R3K3C6ATMA1
--
Infineon
