Manufacturer
DiodesManufacturer Product Number
DMG6601LVT-7
Description
场效应管(MOSFET) 850mW 30V 3.8A;2.5A 1个N沟道+1个P沟道 TSOT-23-6
Manufacturer Standard Lead Time
2-3
Detailed Description
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 30V |
| Drain-Source On-Resistance | 0.055Ω |
| Drain-Source Saturation Current | 3.8 A |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.0975 | |
| 200+ | $ 0.0654 | |
| 1500+ | $ 0.0599 | |
| 3000+ | $ 0.0557 |
Minimum:1/Multiple:1
Total amount: