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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

DMG6602SVT-7

Manufacturer

Diodes

Manufacturer Product Number

DMG6602SVT-7

Description

场效应管(MOSFET) 840mW 30V 3.4A；2.8A 1个N沟道+1个P沟道 TSOT-23-6

Manufacturer Standard Lead Time

2-3

Detailed Description

场效应管(MOSFET) 840mW 30V 3.4A；2.8A 1个N沟道+1个P沟道 TSOT-23-6

Product Attributes

Type	Description
Category	Boxes, Enclosures, Racks andBox Components
Operating Temperature	-55℃~150℃
Drain-Source Voltage	30V
Gate Charge	13nC@10V
Type	N+P-Channel
Power	840mW
Threshold Voltage	2.3 V @ 250 µA
On-Resistance	60 mΩ @ 3.1 A, 10 V
Continuous Drain Current	3.4 A, 2.8 A
Input Capacitance	400 pF @ 15 V

Documents & Media

Resource Type	Link

Environmental & Export Classifications

Attribute	Description

Additional Resources

Attribute	Description

In Stock: 148

Quantity	Unit Price	Ext Price
1+	$ 0.1072
200+	$ 0.0738
1500+	$ 0.0668
3000+	$ 0.0613

Price For：Each

Minimum:1/Multiple:1

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DMG6602SVTQ-7

Dual N/P-Channel 30 V 1.27 W 13/9 nC Silicon Surface Mount Mosfet - TSOT-26

Diodes

DMG6602SVTQ-7

--

Diodes

DMG6602SVTQ-7

Dual N/P-Channel 30 V 1.27 W 13/9 nC Silicon Surface Mount Mosfet - TSOT-26

Diodes

DMG6602SVTQ-7

场效应管(MOSFET) 840mW 30V 3.4A；2.8A 1个N沟道+1个P沟道 TSOT-23-6

Diodes