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DMG6602SVT-7
Manufacturer
DiodesManufacturer Product Number
DMG6602SVT-7
Description
MOSFET MOSFET BVDSS: 25V-30 5V-30V,TSOT23,3K
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 30V |
| Gate Charge | 13nC@10V |
| Type | N+P-Channel |
| Power | 840mW |
| Threshold Voltage | 2.3 V @ 250 µA |
| On-Resistance | 60 mΩ @ 3.1 A, 10 V |
| Continuous Drain Current | 3.4 A, 2.8 A |
| Input Capacitance | 400 pF @ 15 V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 27,268
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 3000+ | $ 0.1518 | |
| 6000+ | $ 0.1365 | |
| 9000+ | $ 0.1295 | |
| 15000+ | $ 0.1212 | |
| 21000+ | $ 0.1170 | |
| 30000+ | $ 0.1114 | |
| 75000+ | $ 0.1017 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllDMG6602SVTQ-7
Dual N/P-Channel 30 V 1.27 W 13/9 nC Silicon Surface Mount Mosfet - TSOT-26
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DMG6602SVTQ-7
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Diodes
DMG6602SVTQ-7
Dual N/P-Channel 30 V 1.27 W 13/9 nC Silicon Surface Mount Mosfet - TSOT-26
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DMG6602SVTQ-7
场效应管(MOSFET) 840mW 30V 3.4A；2.8A 1个N沟道+1个P沟道 TSOT-23-6
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