Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SQJ872EP-T1_GE3
Manufacturer
VISHAYManufacturer Product Number
SQJ872EP-T1_GE3
Description
表面贴装 N 沟道 150V 24.5A（Tc） 55W（Tc） PowerPAK® SO-8
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃ ~ 175℃ |
| Type | N-channel |
| Gate Charge | 22nC@10V |
| Threshold Voltage | 3.5V@250µA |
| Drain-Source Voltage | 150V |
| Power | 55 watt |
| Continuous Drain Current | 24.5 A |
| On-Resistance | 35.5 mΩ @ 10 A, 10 V |
| Input Capacitance | 1045 pF @ 25 V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 19,914
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 1.5332 | |
| 50+ | $ 1.2853 | |
| 100+ | $ 1.0361 | |
| 500+ | $ 0.7729 | |
| 1500+ | $ 0.7589 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllSQJ886EP-T1_GE3
MOSFET N-CH 40V 60A PPAK SO-8
VISHAY
SQJ886EP-T1_GE3
场效应管(MOSFET) 55W 40V 60A 1个N沟道 SO-8-4
VISHAY
SQJ910AEP-T1_BE3
DUAL N-CHANNEL 30-V (D-S) 175C M
VISHAY
SQJ910AEP-T1_GE3
Mosfet Array 2 N-Channel (Dual) 30V 30A (Tc) 48W Surface Mount PowerPAK® SO-8 Dual
VISHAY