Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SQJ886EP-T1_GE3
Manufacturer
VISHAYManufacturer Product Number
SQJ886EP-T1_GE3
Description
场效应管(MOSFET) 55W 40V 60A 1个N沟道 SO-8-4
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Threshold Voltage | 2.5 V @ 250 μA |
| Operating Temperature | -55℃ ~ 175℃ |
| Type | N-channel |
| Drain-Source Voltage | 40V |
| Continuous Drain Current | 60A |
| Power | 55 watt |
| Gate Charge | 65nC@10V |
| On-Resistance | 4.5 mΩ @ 15.3 A, 10 V |
| Input Capacitance | 2922 pF @ 20 V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 1,929
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.8495 | |
| 10+ | $ 0.7631 | |
| 30+ | $ 0.7158 | |
| 100+ | $ 0.6489 | |
| 500+ | $ 0.6253 | |
| 1000+ | $ 0.6141 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllSQJ910AEP-T1_BE3
DUAL N-CHANNEL 30-V (D-S) 175C M
VISHAY
SQJ910AEP-T1_GE3
Mosfet Array 2 N-Channel (Dual) 30V 30A (Tc) 48W Surface Mount PowerPAK® SO-8 Dual
VISHAY
SQJ912BEP-T1_GE3
MOSFET Dual N-Ch 40V AEC-Q101 Qualified
VISHAY
SQJ912DEP-T1_GE3
AUTOMOTIVE DUAL N-CHANNEL 40 V (
VISHAY