Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SQ9407EY-T1_GE3
Manufacturer
VISHAYManufacturer Product Number
SQ9407EY-T1_GE3
Description
MOSFET P-CHAN 60V D-S SO8
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | P-channel |
| Drain-Source Voltage | 60 V |
| Threshold Voltage | 2.5 V @ 250 μA |
| Operating Temperature | -55℃ ~ 175℃ |
| Gate Charge | 40 nC @ 10 V |
| Continuous Drain Current | 4.6A |
| On-Resistance | 85mΩ@3.5A，10V |
| Input Capacitance | 1140pF@30V |
| Power | 3.75W |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 22,996
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 1.3856 | |
| 50+ | $ 1.1544 | |
| 100+ | $ 0.9233 | |
| 500+ | $ 0.7269 | |
| 1000+ | $ 0.6656 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllSQ9945BEY-T1_BE3
MOSFET 2N-CH 60V 5.4A
VISHAY
SQ9945BEY-T1_GE3
Vishay 双 Si N沟道 MOSFET SQ9945BEY-T1_GE3, 5.4 A, Vds=60 V, 8引脚 SOIC封装
VISHAY
SQ9945BEY-T1_GE3
Vishay 双 Si N沟道 MOSFET SQ9945BEY-T1_GE3, 5.4 A, Vds=60 V, 8引脚 SOIC封装
VISHAY
SQ9945BEY-T1_GE3-HXY
--
HUAXUANYANG
