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SQ9945BEY-T1_GE3
Manufacturer
VISHAYManufacturer Product Number
SQ9945BEY-T1_GE3
Description
Vishay 双 Si N沟道 MOSFET SQ9945BEY-T1_GE3, 5.4 A, Vds=60 V, 8引脚 SOIC封装
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Drain-Source Voltage | 60 V |
| Threshold Voltage | 2.5 V @ 250 μA |
| Operating Temperature | -55℃ ~ 175℃ |
| Power | 4W |
| Continuous Drain Current | 5.4A |
| Input Capacitance | 470pF @ 25V |
| Gate Charge | 12nC@10V |
| On-Resistance | 45mΩ |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 5,818
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 2500+ | $ 0.7798 | |
| 5000+ | $ 0.7241 | |
| 7500+ | $ 0.6963 | |
| 12500+ | $ 0.6949 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
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SQ9945BEY-T1_GE3-HXY
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