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SI2377EDS-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI2377EDS-T1-GE3
Description
场效应管(MOSFET) 1.25W；1.8W 20V 4.4A 1个P沟道 SOT-23
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | P-channel |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 20V |
| Threshold Voltage | 1V@250µA |
| Continuous Drain Current | 4.4A |
| Power | 1.25W, 1.8W |
| Gate Charge | 21nC@8V |
| On-Resistance | 61mΩ@3.2A, 4.5V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 1,835
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 0.3300 | |
| 50+ | $ 0.2632 | |
| 150+ | $ 0.2339 | |
| 500+ | $ 0.1894 | |
| 3000+ | $ 0.1741 | |
| 6000+ | $ 0.1643 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
Si2377EDS-T1-GE3-VB
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TECH PUBLIC
SI2392ADS-T1-GE3
场效应管(MOSFET) 1.25W；2.5W 100V 3.1A 1个N沟道 SOT-23
VISHAY
