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SI2367DS-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI2367DS-T1-GE3
Description
MOSFET 20V 3.8A 1.7W 66mohm @ 4.5V
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | P-channel |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 20V |
| Threshold Voltage | 1V@250µA |
| Continuous Drain Current | 3.8 A |
| Power | 960mW, 1.7W |
| Gate Charge | 23nC@8V |
| On-Resistance | 66mΩ@2.5A，4.5V |
| Input Capacitance | 561pF@10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2,228
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 1.2909 | |
| 50+ | $ 1.0625 | |
| 100+ | $ 0.8327 | |
| 500+ | $ 0.5682 | |
| 1500+ | $ 0.5598 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllSI2369BDS-T1-GE3
P-Channel 30-V (D-S) MOSFET SOT-23, 27 m @ 10V m @ 7.5V 39 m @ 4.5V
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IC
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场效应管(MOSFET) 1.25W；2.5W 30V 7.6A 1个P沟道 SOT-23
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