Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SI2356DS-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI2356DS-T1-GE3
Description
Si2356DS Series 40 V 3.2 A 51 mOhm Surface Mount N-Channel Mosfet - SOT-23-3
Manufacturer Standard Lead Time
2-5
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Power | 1.7 W |
| Gate-Source Breakdown Voltage | 40V |
| Drain-Source Saturation Current | 4.3A |
| Input Capacitance | 17pF |
| Drain-Source On-Resistance | 0.051Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 1,859
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1000+ | $ 0.1058 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
SI2356DS-T1-GE3-VB
--
Vbsemi
SI2365EDS-T1-GE3
场效应管(MOSFET) 1W；1.7W 20V 5.9A 1个P沟道 SOT-23-3
VISHAY
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO-236
VISHAY
SI2366DS-T1-GE3
30V, 5.8A, 36MOHM, N-CH, SOT-23
VISHAY
