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SI2365EDS-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI2365EDS-T1-GE3
Description
场效应管(MOSFET) 1W；1.7W 20V 5.9A 1个P沟道 SOT-23-3
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | P-channel |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 20V |
| Threshold Voltage | 1V@250µA |
| On-Resistance | 32 mΩ@4 A, 4.5 V |
| Gate Charge | 36nC@8V |
| Continuous Drain Current | 5.9 A |
| Power | 1W, 1.7W |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 268
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.1434 | |
| 200+ | $ 0.1086 | |
| 1500+ | $ 0.0933 | |
| 3000+ | $ 0.0863 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllSI2366DS-T1-GE3
30V, 5.8A, 36MOHM, N-CH, SOT-23
VISHAY
SI2366DS-T1-GE3
30V, 5.8A, 36MOHM, N-CH, SOT-23
VISHAY
Si2366DS-T1-GE3-HXY
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HUAXUANYANG
SI2367DS
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TECH PUBLIC
