Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SI2336DS-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI2336DS-T1-GE3
Description
MOSFET 30V 107A N-CH MOSFET
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Power | 1.8W |
| Gate-Source Breakdown Voltage | 30V |
| Drain-Source On-Resistance | 0.042Ω |
| Drain-Source Saturation Current | 5.2A |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 0
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.6949 | |
| 5+ | $ 0.5417 | |
| 10+ | $ 0.4554 | |
| 50+ | $ 0.2938 | |
| 100+ | $ 0.2507 | |
| 500+ | $ 0.1950 | |
| 1000+ | $ 0.1796 | |
| 1500+ | $ 0.1741 | |
| 3000+ | $ 0.1643 | |
| 9000+ | $ 0.1560 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
SI2336DS-T1-GE3-VB
--
Vbsemi
SI2337DS-T1-E3
MOSFET P-CH 80V 2.2A SOT23-3
VISHAY
SI2337DS-T1-E3-VB
--
Vbsemi
SI2337DS-T1-GE3
MOSFET 80V 2.2A 2.5W 270mohm @ 10V
VISHAY
