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SI2337DS-T1-E3
Manufacturer
VISHAYManufacturer Product Number
SI2337DS-T1-E3
Description
MOSFET P-CH 80V 2.2A SOT23-3
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | P-channel |
| Threshold Voltage | 4V@250µA |
| Drain-Source Voltage | 80 V |
| Operating Temperature | -50℃~150℃ |
| Gate Charge | 17nC@10V |
| Continuous Drain Current | 2.2A |
| Power | 760mW, 2.5W |
| Input Capacitance | 500pF@40V |
| On-Resistance | 270mΩ@1.2A, 10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 0
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|---|
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Associated Product
See All
SI2337DS-T1-E3-VB
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Vbsemi
SI2337DS-T1-GE3
MOSFET 80V 2.2A 2.5W 270mohm @ 10V
VISHAY
SI2337DS-T1-GE3
MOSFET 80V 2.2A 2.5W 270mohm @ 10V
VISHAY
SI2338DS-T1-BE3
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VISHAY
