Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SI2319DDS-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI2319DDS-T1-GE3
Description
场效应管(MOSFET) 1W；1.7W 40V 2.7A；3.6A 1个P沟道 SOT-23-3(TO-236-3)
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | P-channel |
| Operating Temperature | -55℃~150℃ |
| Threshold Voltage | 2.5 V @ 250 μA |
| Drain-Source Voltage | 40V |
| Gate Charge | 19 nC @ 10 V |
| Power | 1W, 1.7W |
| Continuous Drain Current | 2.7 A, 3.6 A |
| On-Resistance | 75 mΩ @ 2.7 A, 10 V |
| Input Capacitance | 650 pF @ 20 V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 3,170
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 0.3481 | |
| 50+ | $ 0.2785 | |
| 150+ | $ 0.2493 | |
| 500+ | $ 0.2005 | |
| 3000+ | $ 0.1852 | |
| 6000+ | $ 0.1755 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
SI2319DS
--
TECH PUBLIC
Si2319DS-T1-E3
--
VISHAY
SI2319DS-T1-E3
原装正品
VISHAY
SI2319DS-T1-GE3
场效应管(MOSFET) 750mW 40V 2.3A 1个P沟道 SOT-23-3
VISHAY
