Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
SI2319DS-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI2319DS-T1-GE3
Description
场效应管(MOSFET) 750mW 40V 2.3A 1个P沟道 SOT-23-3
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Power | 750mW |
| Type | P-channel |
| Operating Temperature | -55℃~150℃ |
| Threshold Voltage | 3 V @ 250 µA |
| Continuous Drain Current | 2.3A |
| Drain-Source Voltage | 40V |
| Gate Charge | 17nC@10V |
| On-Resistance | 82mΩ @ 3A, 10V |
| Input Capacitance | 470pF @ 20V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 3
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.4219 | |
| 10+ | $ 0.3272 | |
| 30+ | $ 0.2869 | |
| 100+ | $ 0.2312 | |
| 500+ | $ 0.2089 | |
| 1000+ | $ 0.1963 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllSI2321-TP
--
MCC
SI2321-TP
MOSFET P-Channel Enhancement Mode Field Effect Transistor
MCC
SI2323
--
PAKER MICRO
SI2323
场效应管(MOSFET) 45mΩ@4.5V 20V 5A 1个P沟道 SOT-23
HUAXUANYANG
