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SI2319CDS-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI2319CDS-T1-GE3
Description
场效应管(MOSFET) 2.5W；1.25W 40V 4.4A 1个P沟道 SOT-23-3(TO-236-3)
Manufacturer Standard Lead Time
2-5
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Threshold Voltage | 2.5 V @ 250 μA |
| Type | P-Channel |
| Power | 1.25W, 2.5W |
| Gate Charge | 21nC@10V |
| Drain-Source Voltage | -40V |
| Continuous Drain Current | -4.4A |
| On-Resistance | 77mΩ@-3.1A,-10V |
| Input Capacitance | 595pF@20V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2,284
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1000+ | $ 0.2005 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
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SI2319DDS-T1-GE3
场效应管(MOSFET) 1W；1.7W 40V 2.7A；3.6A 1个P沟道 SOT-23-3(TO-236-3)
VISHAY
SI2319DDS-T1-GE3
表面贴装 P 沟道 40V 2.7A（Ta），3.6A（Tc） 1W（Ta），1.7W（Tc） SOT-23-3（TO-236）
VISHAY
