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SI2312BDS-T1-E3
Manufacturer
VISHAYManufacturer Product Number
SI2312BDS-T1-E3
Description
场效应管(MOSFET) 750mW 20V 3.9A 1个N沟道 SOT-23
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Power | 750mW |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Drain-Source Voltage | 20V |
| Gate Charge | 12nC@4.5V |
| Threshold Voltage | 850mV @ 250μA |
| Continuous Drain Current | 3.9A |
| On-Resistance | 31mΩ @ 5A, 4.5V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 2
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.2312 | |
| 100+ | $ 0.1782 | |
| 750+ | $ 0.1462 | |
| 1500+ | $ 0.1323 | |
| 3000+ | $ 0.1212 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
Si2312BDS-T1-E3-HXY
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HUAXUANYANG
SI2312BDS-T1-GE3
场效应管(MOSFET) 750mW 20V 3.9A 1个N沟道 SOT-23
VISHAY
Si2312BDS-T1-GE3-HXY
--
HUAXUANYANG
SI2312BDS-T1-GE3-VB
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Vbsemi
