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SI2312BDS-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI2312BDS-T1-GE3
Description
场效应管(MOSFET) 750mW 20V 3.9A 1个N沟道 SOT-23
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Power | 750mW |
| Operating Temperature | -55℃~150℃ |
| Type | N-channel |
| Drain-Source Voltage | 20V |
| Gate Charge | 12nC@4.5V |
| Threshold Voltage | 850mV @ 250μA |
| Continuous Drain Current | 3.9A |
| On-Resistance | 31mΩ @ 5A, 4.5V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 14,973
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.5320 | |
| 10+ | $ 0.4428 | |
| 30+ | $ 0.4024 | |
| 100+ | $ 0.3551 | |
| 500+ | $ 0.3036 | |
| 1000+ | $ 0.2896 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
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SI2312CDS
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TECH PUBLIC
SI2312CDS-T1-BE3
MOSFET N-CHANNEL 20-V (D-S)
VISHAY
