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SI2309CDS-T1-BE3
Manufacturer
VISHAYManufacturer Product Number
SI2309CDS-T1-BE3
Description
场效应管(MOSFET) 1W；1.7W 60V 1.2A；1.6A 1个P沟道 SOT-23(TO-236)
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | P-channel |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 60 V |
| Threshold Voltage | 3 V @ 250 µA |
| Power | 1W, 1.7W |
| Gate Charge | 4.1 nC @ 4.5 V |
| Continuous Drain Current | 1.2A, 1.6A |
| On-Resistance | 345mΩ @ 1.25A, 10V |
| Input Capacitance | 210pF @ 30V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 164
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.9149 | |
| 10+ | $ 0.7464 | |
| 30+ | $ 0.6601 | |
| 100+ | $ 0.5765 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
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SI2309CDS-T1-E3
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SI2309CDS-T1-E3
MOSFET 60V 1.6A 1.7W 345mohm @ 10V
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SI2309CDS-T1-GE3
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TECH PUBLIC
SI2309CDS-T1-GE3
场效应管(MOSFET) 1W；1.7W 60V 1.6A 1个P沟道 SOT-23-3(TO-236-3)
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