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SI2309CDS-T1-GE3
Manufacturer
VISHAYManufacturer Product Number
SI2309CDS-T1-GE3
Description
场效应管(MOSFET) 1W；1.7W 60V 1.6A 1个P沟道 SOT-23-3(TO-236-3)
Manufacturer Standard Lead Time
2-3
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 60V |
| Power | 1.7 W |
| Input Capacitance | 20pF |
| Drain-Source Saturation Current | 1.6A |
| Drain-Source On-Resistance | 0.345Ω |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 162,789
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.1281 | |
| 200+ | $ 0.0877 | |
| 1500+ | $ 0.0780 | |
| 3000+ | $ 0.0724 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
SI2309CDS-T1-GE3-HXY
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HUAXUANYANG
SI2309CDS-T1-GE3-MS
类型：P沟道漏源电压(Vdss)：-60V连续漏极电流(Id)：-1.8A功率(Pd)：1.56W导通电阻(RDS(on)@Vgs,Id)：200mΩ@10V,1.8A阈值电压Vgs(th)@Id)：-1.0V至-2.5V@250uA
MSKSEMI
SI2309CDS-T1-GE3-VB
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Vbsemi
SI2309CDS-T1-MS
P沟道,VDSS耐压60V,ID电流2A,RDON导通电阻160mR@VGS10V(MAX),VGS(th)开启电压1.4-2.6V,
MSKSEMI
