Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
2N7002E-T1-E3
Manufacturer
VISHAYManufacturer Product Number
2N7002E-T1-E3
Description
注意：本网站自有库存产品每个型号150元人民币起订，且订单总额不得低于300元人民币
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Operating Temperature | -55℃~150℃ |
| Drain-Source Voltage | 60 V |
| Threshold Voltage | 2.5 V @ 250 μA |
| Type | N-channel |
| Power | 350mW |
| Gate Charge | 0.6nC @ 4.5V |
| Continuous Drain Current | 240 mA |
| On-Resistance | 3Ω@250mA, 10V |
| Input Capacitance | 21pF@5V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 0
| Quantity | Unit Price | Ext Price |
|---|
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
2N7002E-T1-E3-ES
场效应管(MOSFET) 200mW 60V 300mA 1个N沟道 SOT-23
EIECSUPER
2N7002E-T1-E3-ES
--
EIECSUPER
2N7002E-T1-E3-HXY
--
HUAXUANYANG
2N7002E-T1-E3-MS
类型：N沟道漏源电压(Vdss)：60V连续漏极电流(Id)：300mA功率(Pd)：350mW导通电阻(RDS(on)@Vgs,Id)：2.2Ω@10V,300mA阈值电压(Vgs(th)@Id)：1.6V@250uA栅极电荷(Qg@Vgs)：3.7nC@10V输入电容(Ciss@Vds)：25.5pF@30V反向传输电容(Crss@Vds)
MSKSEMI