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2N7002E-T1-E3-HXY
Manufacturer
HUAXUANYANGManufacturer Product Number
2N7002E-T1-E3-HXY
Description
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Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | 1 N-channel |
| Drain-Source Voltage | 60 V |
| Continuous Drain Current | 300 mA |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 100
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 20+ | $ 0.0181 | |
| 200+ | $ 0.0139 | |
| 600+ | $ 0.0125 | |
| 3000+ | $ 0.0111 | |
| 9000+ | $ 0.0097 | |
| 21000+ | $ 0.0084 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All
2N7002E-T1-E3-MS
类型：N沟道漏源电压(Vdss)：60V连续漏极电流(Id)：300mA功率(Pd)：350mW导通电阻(RDS(on)@Vgs,Id)：2.2Ω@10V,300mA阈值电压(Vgs(th)@Id)：1.6V@250uA栅极电荷(Qg@Vgs)：3.7nC@10V输入电容(Ciss@Vds)：25.5pF@30V反向传输电容(Crss@Vds)
MSKSEMI
2N7002E-T1-GE3
场效应管(MOSFET) 350mW 60V 240mA 1个N沟道 TO-236
VISHAY
2N7002E-T1-GE3
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VISHAY
2N7002EM3T5G
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TECH PUBLIC