Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
TTD1409B,S4X
Manufacturer
ToshibaManufacturer Product Number
TTD1409B,S4X
Description
雙極結晶體管 - BJT Pb-F POWER MOSFET TRANSISTOR TO-220SIS PD=25W F=1MHZ
Manufacturer Standard Lead Time
3-5
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Jing Ti Guan Type | NPN |
| Operating Temperature | 150℃ |
| Power | 2W |
| Ji Dian Ji Current（ic） | 6A |
| Ji She Ji Ji Chuan Voltage（vceo） | 400V |
| Ji Dian Ji Jie Zhi Current（icbo） | 20µA |
| DC Gain (hFE@Ic, Vce) | 600@2A, 2V |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 2V@40mA, 4A |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 6
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 1.9621 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllTTD1415B,S4X(S
--
Toshiba
TTD18P10AT
Trench MOS这种新型垂直结构器件在VDMOS的基础上发展起来，和VDMOS相比，Trench MOS拥行更低的导通屯阻和栅漏电荷密度，因而拥行更低的导通和开义损耗及更快的开义速度。 同时由于Trench MOS的沟逍是垂直的， 故可进一步提高具沟逍密度， 减小芯片尺寸， 降低导通电阻。 ）并且具有MOS器件的一切优点， 如： 开关速度快、 驱动功率小等。并联的元胞具有负的温度系数，有利于大电流和更宽的安全工作区的实现。
UNIS
TTDO-100KC3-5
NTC thermistor; 100kΩ; THT; 3960K; -40÷250°C; ±1%
TEWA
TTDO-10KC3-8
NTC thermistor; 10kΩ; THT; 3977K; -40÷225°C; ±1%
TEWA