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TTD18P10AT
Manufacturer
UNISManufacturer Product Number
TTD18P10AT
Description
Trench MOS这种新型垂直结构器件在VDMOS的基础上发展起来，和VDMOS相比，Trench MOS拥行更低的导通屯阻和栅漏电荷密度，因而拥行更低的导通和开义损耗及更快的开义速度。 同时由于Trench MOS的沟逍是垂直的， 故可进一步提高具沟逍密度， 减小芯片尺寸， 降低导通电阻。 ）并且具有MOS器件的一切优点， 如： 开关速度快、 驱动功率小等。并联的元胞具有负的温度系数，有利于大电流和更宽的安全工作区的实现。
Manufacturer Standard Lead Time
3-5
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Drain-Source Voltage | 100 V |
| Type | 1 P-Channel |
| Continuous Drain Current | 18A |
| Operating Temperature | -55℃ ~ +175℃ |
| Threshold Voltage | 1.7 V @ 250 μA |
| Gate Charge | 70nC@10V |
| Power | 113W |
| Reverse Transfer Capacitance | 53pF@50V |
| On-Resistance | 80mΩ@10V,9A |
| Input Capacitance | 4.182nF@50V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 3
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 0.1504 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
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