Manufacturer
ToshibaManufacturer Product Number
SSM6N7002BFE,LM
Description
MOSFET ES6 S-MOS TRSTR Pd: 0.15W F: 1MHz
Manufacturer Standard Lead Time
10-15
Detailed Description
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Drain-Source Voltage | 60 V |
| Power | 150 mW |
| Operating Temperature | 150℃ |
| Continuous Drain Current | 200mA |
| Type | Dual N-Channel |
| Threshold Voltage | 3.1 V @ 250 μA |
| Input Capacitance | 17pF@25V |
| On-Resistance | 2.1Ω@500mA, 10V |
| Resource Type | Link |
|---|
| Attribute | Description |
|---|
| Attribute | Description |
|---|
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 4000+ | $ 0.0849 | |
| 8000+ | $ 0.0766 | |
| 12000+ | $ 0.0724 | |
| 20000+ | $ 0.0668 | |
| 28000+ | $ 0.0641 | |
| 40000+ | $ 0.0613 | |
| 100000+ | $ 0.0557 | |
| 200000+ | $ 0.0515 |
Minimum:1/Multiple:1
Total amount: