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2SK208-R(TE85L,F)
Manufacturer
ToshibaManufacturer Product Number
2SK208-R(TE85L,F)
Description
JFET Junction FET N-Ch 0.3 to 6.5mA 10mA
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Power | 100mW |
| Operating Temperature | 125°C |
| Gate-Source Breakdown Voltage | 50V |
| Type | N-channel |
| Input Capacitance | 8.2pF@10V |
| Zha Yuan Jie Zhi Voltage | 400mV@100nA |
| Drain-Source Saturation Current | 300µA@10V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 0
| Quantity | Unit Price | Ext Price |
|---|
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Associated Product
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结型场效应管(JFET) 100mW 400mV@100nA 50V N沟道 SC-59
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2SK208-Y(TE85L,F)
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2SK209-BL(TE85L,F)
结型场效应管(JFET) 150mW 1.5V@100nA 50V N沟道 SC-59
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