Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
2SK208-Y(TE85L,F)
Manufacturer
ToshibaManufacturer Product Number
2SK208-Y(TE85L,F)
Description
结型场效应管(JFET) 100mW 400mV@100nA 50V N沟道 SC-59
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Power | 100mW |
| Operating Temperature | 125°C |
| Gate-Source Breakdown Voltage | 50V |
| Type | N-channel |
| Drain-Source Saturation Current | 1.2mA@10V |
| Input Capacitance | 8.2pF@10V |
| Zha Yuan Jie Zhi Voltage | 400mV@100nA |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 4,290
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 0.1434 | |
| 50+ | $ 0.1128 | |
| 150+ | $ 0.0989 | |
| 500+ | $ 0.0836 | |
| 3000+ | $ 0.0682 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See All2SK2084L-E
Trans MOSFET N-CH 20V 7A 3-Pin(3+Tab) DPAK(L)-(2) Box
Renesas
2SK209-BL(TE85L,F)
结型场效应管(JFET) 150mW 1.5V@100nA 50V N沟道 SC-59
Toshiba
2SK209-BL(TE85L,F)
JFET N-Ch 10mA -50V FET 150 mW Audio LNA
Toshiba
2SK209-GR(TE85L,F)
--
Toshiba