Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
CSD85301Q2
Manufacturer
TIManufacturer Product Number
CSD85301Q2
Description
MOSFET-阵列-2-N-通道（双）-20V-5A-2.3W-表面贴装型-6-WSON（2x2）
Manufacturer Standard Lead Time
5-7个
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 20V |
| Drain-Source On-Resistance | 0.039Ω |
| Drain-Source Saturation Current | 5 A |
| Input Capacitance | 62pF |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 3,020
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 5+ | $ 0.3342 | |
| 50+ | $ 0.2618 | |
| 150+ | $ 0.2298 | |
| 500+ | $ 0.1922 | |
| 3000+ | $ 0.1741 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllCSD85301Q2T
Texas Instruments NexFET 系列 N沟道 Si MOSFET CSD85301Q2T, 5 A, Vds=20 V, 6引脚 WSON封装
TI
CSD85302L
CSD85302L CSD85302L
TI
CSD85302LT
--
TI
CSD85312Q3E
MOSFET Dual 20V N-CH Pwr MOSFETs
TI
