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CSD85301Q2T
Manufacturer
TIManufacturer Product Number
CSD85301Q2T
Description
Texas Instruments NexFET 系列 N沟道 Si MOSFET CSD85301Q2T, 5 A, Vds=20 V, 6引脚 WSON封装
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 20V |
| Drain-Source On-Resistance | 0.039Ω |
| Drain-Source Saturation Current | 5 A |
| Input Capacitance | 62pF |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 159
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 1+ | $ 3.0413 | |
| 10+ | $ 1.9342 | |
| 100+ | $ 1.2979 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
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CSD85302L CSD85302L
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