Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
RQ3E070BNTB1
Manufacturer
ROHMManufacturer Product Number
RQ3E070BNTB1
Description
--
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Type | 1 N-channel |
| Drain-Source Voltage | 30V |
| Threshold Voltage | 2.5V@1mA |
| On-Resistance | 27mΩ@7A, 10V |
| Gate Charge | 8.9nC@10V |
| Continuous Drain Current | 15A,7A |
| Power | 2W,13W |
| Input Capacitance | 410pF@15V |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 3,100
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 3000+ | $ 0.2980 | |
| 15000+ | $ 0.2437 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllRQ3E075ATTB
栅极电压Vgs：±20V Pd-功率耗散(Max)：15W(Tc) Rds On(Max)@Id,Vgs：23mΩ@7.5A,10V 工作温度：-55°C~150°C(TJ) 封装/外壳：HSMT
ROHM
RQ3E075ATTB
--
ROHM
RQ3E075ATTB
MOSFET Pch -30V -18A Si MOSFET
ROHM
RQ3E080BNTB
--
ROHM