Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
RQ1A070ZPHZGTR
Manufacturer
ROHMManufacturer Product Number
RQ1A070ZPHZGTR
Description
--
Manufacturer Standard Lead Time
10-15
Detailed Description
Product Attributes
| Type | Description |
|---|---|
| Category | Boxes, Enclosures, Racks andBox Components |
| Gate-Source Breakdown Voltage | 12V |
| Drain-Source On-Resistance | 0.012Ω |
| Drain-Source Saturation Current | 7A |
| Input Capacitance | 750pF |
Documents & Media
| Resource Type | Link |
|---|
Environmental & Export Classifications
| Attribute | Description |
|---|
Additional Resources
| Attribute | Description |
|---|
In Stock: 3,000
| Quantity | Unit Price | Ext Price |
|---|---|---|
| 10+ | $ 0.8481 | |
| 100+ | $ 0.6517 | |
| 1000+ | $ 0.5264 | |
| 6000+ | $ 0.4080 | |
| 15000+ | $ 0.3537 |
Price For：Each
Minimum:1/Multiple:1
Total amount:
Associated Product
See AllRQ1C065UNTR
--
ROHM
RQ1C075UNTR
FET类型：N-Channel 漏源极电压Vds：20V 连续漏极电流Id：7.5A(Ta) 栅极电压Vgs：±10V Pd-功率耗散(Max)：700mW(Ta)
ROHM
RQ1C075UNTR
--
ROHM
RQ1E050RPTR
栅极电压Vgs：±20V Pd-功率耗散(Max)：700mW(Ta) Rds On(Max)@Id,Vgs：31mΩ@5A,10V 工作温度：150°C(TJ) 封装/外壳：TSMT
ROHM